Nexperia Type N-Channel MOSFET, 3 A, 30 V Enhancement, 3-Pin SOT-23 PMV100ENEAR
- RS Stock No.:
- 153-0784
- Mfr. Part No.:
- PMV100ENEAR
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
PHP315.80
(exc. VAT)
PHP353.70
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 25 unit(s) ready to ship from another location
- Plus 2,050 unit(s) shipping from January 02, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 225 | PHP12.632 | PHP315.80 |
| 250 - 600 | PHP11.37 | PHP284.25 |
| 625 - 1225 | PHP10.233 | PHP255.83 |
| 1250 - 2475 | PHP9.209 | PHP230.23 |
| 2500 + | PHP8.288 | PHP207.20 |
*price indicative
- RS Stock No.:
- 153-0784
- Mfr. Part No.:
- PMV100ENEAR
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 118mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 3.6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 4.5W | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4 mm | |
| Length | 3mm | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 118mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 3.6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 4.5W | ||
Maximum Operating Temperature 150°C | ||
Width 1.4 mm | ||
Length 3mm | ||
Height 1mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
30 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Logic level compatible
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
Related links
- Nexperia Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Nexperia Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Nexperia Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Nexperia Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 PMV25ENEAR
- Nexperia Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 PMV50ENEAR
- Nexperia Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Nexperia Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23
- Nexperia Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23