Nexperia BUK9M2880E Type N-Channel MOSFET, 33 A, 80 V Enhancement, 4-Pin LFPAK BUK9M28-80EX
- RS Stock No.:
- 153-0774
- Mfr. Part No.:
- BUK9M28-80EX
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
PHP989.80
(exc. VAT)
PHP1,108.575
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 3,325 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 100 | PHP39.592 | PHP989.80 |
| 125 - 225 | PHP37.096 | PHP927.40 |
| 250 - 600 | PHP34.916 | PHP872.90 |
| 625 - 1225 | PHP33.75 | PHP843.75 |
| 1250 + | PHP32.70 | PHP817.50 |
*price indicative
- RS Stock No.:
- 153-0774
- Mfr. Part No.:
- BUK9M28-80EX
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | LFPAK | |
| Series | BUK9M2880E | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 75W | |
| Maximum Gate Source Voltage Vgs | 15 V | |
| Typical Gate Charge Qg @ Vgs | 6.1nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 2.6 mm | |
| Standards/Approvals | No | |
| Length | 3.4mm | |
| Height | 0.9mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type LFPAK | ||
Series BUK9M2880E | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 75W | ||
Maximum Gate Source Voltage Vgs 15 V | ||
Typical Gate Charge Qg @ Vgs 6.1nC | ||
Maximum Operating Temperature 175°C | ||
Width 2.6 mm | ||
Standards/Approvals No | ||
Length 3.4mm | ||
Height 0.9mm | ||
Automotive Standard AEC-Q101 | ||
N-channel 80 V, 28 mΩ logic level MOSFET in LFPAK33, Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
12 V, 24 V and 48 V automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
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