Nexperia Type N-Channel MOSFET, 100 A, 30 V Enhancement, 4-Pin LFPAK PSMN1R5-30YLC,115
- RS Stock No.:
- 816-6969
- Mfr. Part No.:
- PSMN1R5-30YLC,115
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP519.65
(exc. VAT)
PHP582.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 15 unit(s) shipping from March 23, 2026
- Plus 945 unit(s) shipping from March 30, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | PHP103.93 | PHP519.65 |
| 25 - 95 | PHP100.808 | PHP504.04 |
| 100 - 245 | PHP97.786 | PHP488.93 |
| 250 - 495 | PHP94.852 | PHP474.26 |
| 500 + | PHP92.004 | PHP460.02 |
*price indicative
- RS Stock No.:
- 816-6969
- Mfr. Part No.:
- PSMN1R5-30YLC,115
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 179W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.05mm | |
| Length | 5mm | |
| Width | 4.1 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 179W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Maximum Operating Temperature 175°C | ||
Height 1.05mm | ||
Length 5mm | ||
Width 4.1 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors
Related links
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