Nexperia BUK7M1260E Type N-Channel MOSFET, 53 A, 60 V Enhancement, 4-Pin LFPAK BUK7M12-60EX
- RS Stock No.:
- 153-0673
- Mfr. Part No.:
- BUK7M12-60EX
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
PHP1,283.80
(exc. VAT)
PHP1,437.85
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 1,500 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 100 | PHP51.352 | PHP1,283.80 |
| 125 - 225 | PHP48.114 | PHP1,202.85 |
| 250 - 600 | PHP43.982 | PHP1,099.55 |
| 625 - 1225 | PHP41.373 | PHP1,034.33 |
| 1250 + | PHP39.492 | PHP987.30 |
*price indicative
- RS Stock No.:
- 153-0673
- Mfr. Part No.:
- BUK7M12-60EX
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 53A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | LFPAK | |
| Series | BUK7M1260E | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 27mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 24.8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 75W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 3.4mm | |
| Width | 2.6 mm | |
| Height | 0.9mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 53A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type LFPAK | ||
Series BUK7M1260E | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 27mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 24.8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 75W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 3.4mm | ||
Width 2.6 mm | ||
Height 0.9mm | ||
Automotive Standard AEC-Q101 | ||
N-channel 60 V, 12 mΩ standard level MOSFET in LFPAK33, Standard level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Q101 Compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with VGS(th) rating of greater than 1 V at 175 °C
12 V automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
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