IXYS HiperFET, Polar Type N-Channel MOSFET, 53 A, 800 V Enhancement, 4-Pin SOT-227 IXFN60N80P

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Subtotal (1 unit)*

PHP2,893.56

(exc. VAT)

PHP3,240.79

(inc. VAT)

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Units
Per Unit
1 - 9PHP2,893.56
10 - 49PHP2,806.75
50 - 99PHP2,722.57
100 - 249PHP2,640.89
250 +PHP2,561.67

*price indicative

RS Stock No.:
194-350
Distrelec Article No.:
302-53-376
Mfr. Part No.:
IXFN60N80P
Manufacturer:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

53A

Maximum Drain Source Voltage Vds

800V

Series

HiperFET, Polar

Package Type

SOT-227

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

140mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

1.04kW

Typical Gate Charge Qg @ Vgs

250nC

Forward Voltage Vf

1.5V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

25.42 mm

Standards/Approvals

No

Length

38.23mm

Height

9.6mm

Automotive Standard

No

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