N-Channel MOSFET, 53 A, 800 V, 4-Pin SOT-227 IXYS IXFN60N80P

RS Stock No.:: 194-350
Mfr. Part No.:: IXFN60N80P
Manufacturer:: IXYS

N-Channel MOSFET, 53 A, 800 V, 4-Pin SOT-227 IXYS IXFN60N80P

This image is representative of the product range

Available for back order.

Price Each

PHP2,602.68

(exc. VAT)

PHP2,915.00

(inc. VAT)

Units	Per Unit
1 - 9	PHP2,602.68
10 - 49	PHP2,524.60
50 - 99	PHP2,448.87
100 - 249	PHP2,375.41
250 +	PHP2,304.14

RS Stock No.:: 194-350
Mfr. Part No.:: IXFN60N80P
Manufacturer:: IXYS

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	53 A
Maximum Drain Source Voltage	800 V
Series	HiperFET, Polar
Package Type	SOT-227B
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	140 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.04 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Typical Gate Charge @ Vgs	250 nC @ 10 V
Width	25.42mm
Length	38.23mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Transistor Material	Si
Height	9.6mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 53 A, 800 V, 4-Pin SOT-227 IXYS IXFN60N80P

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series