Nexperia Type N-Channel MOSFET, 5.5 A, 30 V Enhancement, 3-Pin SOT-23 PMV25ENEAR
- RS Stock No.:
- 151-3122
- Mfr. Part No.:
- PMV25ENEAR
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
PHP592.35
(exc. VAT)
PHP663.425
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from July 06, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 225 | PHP23.694 | PHP592.35 |
| 250 - 600 | PHP21.324 | PHP533.10 |
| 625 - 1225 | PHP19.192 | PHP479.80 |
| 1250 - 2475 | PHP17.272 | PHP431.80 |
| 2500 + | PHP15.545 | PHP388.63 |
*price indicative
- RS Stock No.:
- 151-3122
- Mfr. Part No.:
- PMV25ENEAR
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 39mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 12.6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 6.94W | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Width | 1.4 mm | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 39mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 12.6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 6.94W | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Width 1.4 mm | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Automotive MOSFETs, The world's largest portfolio of AEC-Q101 qualified power MOSFETs, An in-depth understanding of automotive system requirements and focused technical capability enables Nexperia to provide power semiconductor solutions across a wide spectrum of applications. From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, Nexperia Power Semiconductors can provide the answer to many automotive system power problems.
AEC-Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175°C rating
30 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Low threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
Related links
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- Nexperia Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Nexperia Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Nexperia Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Nexperia Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23