IXYS HiperFET Type N-Channel MOSFET, 170 A, 650 V Enhancement, 4-Pin SOT-227 IXFN170N65X2
- RS Stock No.:
- 146-4241
- Mfr. Part No.:
- IXFN170N65X2
- Manufacturer:
- IXYS
This image is representative of the product range
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Subtotal (1 tube of 10 units)*
PHP38,361.54
(exc. VAT)
PHP42,964.92
(inc. VAT)
FREE delivery for orders over ₱3,000.00
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- Shipping from January 01, 2027
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Units | Per Unit | Per Tube* |
|---|---|---|
| 10 - 40 | PHP3,836.154 | PHP38,361.54 |
| 50 - 90 | PHP3,721.07 | PHP37,210.70 |
| 100 - 240 | PHP3,609.438 | PHP36,094.38 |
| 250 - 490 | PHP3,501.155 | PHP35,011.55 |
| 500 + | PHP3,396.12 | PHP33,961.20 |
*price indicative
- RS Stock No.:
- 146-4241
- Mfr. Part No.:
- IXFN170N65X2
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 170A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | HiperFET | |
| Package Type | SOT-227 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 13mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.4V | |
| Typical Gate Charge Qg @ Vgs | 434nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.17kW | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 38.23mm | |
| Width | 25.07 mm | |
| Height | 9.6mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 170A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series HiperFET | ||
Package Type SOT-227 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 13mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.4V | ||
Typical Gate Charge Qg @ Vgs 434nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.17kW | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Length 38.23mm | ||
Width 25.07 mm | ||
Height 9.6mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
IXYS Corporation (NASDAQ: IXYS), a global manufacturer of Power Semiconductors and integrated circuits (ICs) for energy efficiency, power management, transportation, medical, and motor control applications, announces an expansion of its Ultra Junction Power MOSFET product line: 650V X2-Class Power MOSFETs with fast body diodes. With on-resistance as low as 17 milliohms and current ratings ranging from 22A to 150A, these devices are optimized for soft-switching resonant-mode power conversion applications.The intrinsic fast body diodes HiPerFETs™ of the MOSFETs display very soft recovery characteristics, minimizing electromagnetic interference (EMI), especially in half or full-bridge switching topologies. With low reverse recovery charge and time, the body diodes can be utilized to make sure that all the energies are removed during high-speed switching to avoid device failure and achieve high efficiency. Like other Ultra Junction MOSFETs from IXYS, these new devices have been developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced on-resistance and gate charge. They also exhibit a superior dv/dt performance and are avalanche rated as well. Thanks to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements.Suitable applications include resonant-mode power supplies, high intensity discharge (HID) lamp ballast, AC and DC motor drives, DC-DC converters, robotic and servo control, battery chargers, 3-level solar inverters, and LED lighting.These new 650V X2 Power MOSFETs with HiPerFET™ body diodes are available in the following international standard size packages: TO-220, TO-263, SOT-227, TO-247, PLUS247, TO-264, and PLUS264. Some example part numbers include IXFA22N65X2, IXFH46N65X2, IXFK120N65X2, and IXFN150N65X2, with drain current ratings of 22A, 34A, 120A, and 145A, respectively.
Low RDS(ON) and Qg
Fast body diode
dv/dt ruggedness
Avalanche rated
Low package inductance
International standard packages
Resonant mode power supplies
High intensity discharge (HID) lamp ballast
AC and DC motor drives
DC-DC converters
Robotic and servo control
Battery chargers
3-level solar inverters
LED lighting
Unmanned Aerial Vehicles (UAVs)
Higher efficiency
High power density
Easy to mount
Space savings
Related links
- IXYS HiperFET Type N-Channel MOSFET 650 V Enhancement, 4-Pin SOT-227
- IXYS HiperFET Type N-Channel MOSFET 650 V Enhancement, 4-Pin SOT-227
- IXYS HiperFET Type N-Channel MOSFET 650 V Enhancement, 4-Pin SOT-227 IXFN150N65X2
- IXYS HiperFET Type N-Channel MOSFET 1 kV Enhancement, 4-Pin SOT-227
- IXYS HiperFET Type N-Channel MOSFET 1 kV Enhancement, 4-Pin SOT-227
- IXYS HiperFET Type N-Channel MOSFET 850 V Enhancement, 4-Pin SOT-227
- IXYS HiperFET Type N-Channel MOSFET 850 V Enhancement, 4-Pin SOT-227
- IXYS HiperFET Type N-Channel MOSFET 1 kV Enhancement, 4-Pin SOT-227 IXFN24N100
