IXYS HiperFET Type N-Channel MOSFET, 24 A, 1 kV Enhancement, 4-Pin SOT-227 IXFN24N100

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Subtotal (1 unit)*

PHP3,862.33

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PHP4,325.81

(inc. VAT)

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1 - 9PHP3,862.33
10 - 49PHP3,746.45
50 - 99PHP3,596.58
100 - 249PHP3,416.76
250 +PHP3,211.75

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RS Stock No.:
194-091
Mfr. Part No.:
IXFN24N100
Manufacturer:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

24A

Maximum Drain Source Voltage Vds

1kV

Package Type

SOT-227

Series

HiperFET

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

390mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

267nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

568W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Length

38.23mm

Height

9.6mm

Width

25.42 mm

Standards/Approvals

No

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Series


MOSFET Transistors, IXYS


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