IXYS HiperFET Type N-Channel MOSFET, 36 A, 1 kV Enhancement, 4-Pin SOT-227 IXFN36N100

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 unit)*

PHP5,085.59

(exc. VAT)

PHP5,695.86

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • 19 unit(s) shipping from April 29, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
1 - 4PHP5,085.59
5 - 9PHP4,933.02
10 - 19PHP4,785.03
20 - 49PHP4,641.48
50 +PHP4,502.23

*price indicative

RS Stock No.:
193-795
Mfr. Part No.:
IXFN36N100
Manufacturer:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

36A

Maximum Drain Source Voltage Vds

1kV

Package Type

SOT-227

Series

HiperFET

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

240mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

700W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

380nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Height

9.6mm

Length

38.23mm

Width

25.42 mm

Standards/Approvals

No

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Series


MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

Related links