IXYS HiperFET Type N-Channel MOSFET, 145 A, 650 V Enhancement, 4-Pin SOT-227 IXFN150N65X2
- RS Stock No.:
- 146-4239
- Mfr. Part No.:
- IXFN150N65X2
- Manufacturer:
- IXYS
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 10 units)*
PHP34,755.48
(exc. VAT)
PHP38,926.14
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 10 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 10 - 40 | PHP3,475.548 | PHP34,755.48 |
| 50 - 90 | PHP3,388.658 | PHP33,886.58 |
| 100 - 240 | PHP3,303.942 | PHP33,039.42 |
| 250 - 490 | PHP3,221.345 | PHP32,213.45 |
| 500 + | PHP3,140.811 | PHP31,408.11 |
*price indicative
- RS Stock No.:
- 146-4239
- Mfr. Part No.:
- IXFN150N65X2
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 145A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | HiperFET | |
| Package Type | SOT-227 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 17mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.4V | |
| Typical Gate Charge Qg @ Vgs | 335nC | |
| Maximum Power Dissipation Pd | 1.04kW | |
| Maximum Operating Temperature | 150°C | |
| Width | 25.07 mm | |
| Height | 9.6mm | |
| Length | 38.23mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 145A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series HiperFET | ||
Package Type SOT-227 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 17mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.4V | ||
Typical Gate Charge Qg @ Vgs 335nC | ||
Maximum Power Dissipation Pd 1.04kW | ||
Maximum Operating Temperature 150°C | ||
Width 25.07 mm | ||
Height 9.6mm | ||
Length 38.23mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Low RDS(ON) and Qg
Fast body diode
dv/dt ruggedness
Avalanche rated
Low package inductance
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Higher efficiency
High power density
Easy to mount
Space savings
Related links
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