Texas Instruments NexFET Type P-Channel MOSFET, 104 A, 20 V Enhancement, 8-Pin VSON CSD25404Q3T
- RS Stock No.:
- 133-0156
- Mfr. Part No.:
- CSD25404Q3T
- Manufacturer:
- Texas Instruments
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Subtotal (1 pack of 5 units)*
PHP511.56
(exc. VAT)
PHP572.945
(inc. VAT)
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In Stock
- 120 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP102.312 | PHP511.56 |
| 10 - 45 | PHP99.244 | PHP496.22 |
| 50 - 245 | PHP96.266 | PHP481.33 |
| 250 - 495 | PHP93.372 | PHP466.86 |
| 500 + | PHP90.574 | PHP452.87 |
*price indicative
- RS Stock No.:
- 133-0156
- Mfr. Part No.:
- CSD25404Q3T
- Manufacturer:
- Texas Instruments
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Texas Instruments | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 104A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | NexFET | |
| Package Type | VSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1V | |
| Typical Gate Charge Qg @ Vgs | 10.8nC | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Power Dissipation Pd | 96W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.4mm | |
| Height | 1.1mm | |
| Width | 3.4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Texas Instruments | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 104A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series NexFET | ||
Package Type VSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1V | ||
Typical Gate Charge Qg @ Vgs 10.8nC | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Power Dissipation Pd 96W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.4mm | ||
Height 1.1mm | ||
Width 3.4 mm | ||
Automotive Standard No | ||
P-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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