Infineon Dual HEXFET 2 Type P-Channel MOSFET, 8 A, 30 V Enhancement, 8-Pin SOIC IRF9362TRPBF
- RS Stock No.:
- 130-0970
- Mfr. Part No.:
- IRF9362TRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
PHP989.80
(exc. VAT)
PHP1,108.575
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- Final 800 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 100 | PHP39.592 | PHP989.80 |
| 125 - 475 | PHP38.404 | PHP960.10 |
| 500 - 975 | PHP37.252 | PHP931.30 |
| 1000 - 2475 | PHP36.134 | PHP903.35 |
| 2500 + | PHP35.05 | PHP876.25 |
*price indicative
- RS Stock No.:
- 130-0970
- Mfr. Part No.:
- IRF9362TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 32mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2W | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Width | 4 mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Height | 1.5mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 32mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2W | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Width 4 mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Height 1.5mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
N-Channel Power MOSFET 30V, Infineon
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