Infineon HEXFET Type N-Channel MOSFET, 343 A, 40 V Enhancement, 3-Pin TO-220 IRLB3034PBF
- RS Stock No.:
- 124-9024
- Mfr. Part No.:
- IRLB3034PBF
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
PHP10,950.25
(exc. VAT)
PHP12,264.30
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 1,000 unit(s) shipping from June 25, 2026
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Units | Per Unit | Per Tube* |
|---|---|---|
| 50 - 50 | PHP219.005 | PHP10,950.25 |
| 100 - 200 | PHP214.625 | PHP10,731.25 |
| 250 - 450 | PHP210.332 | PHP10,516.60 |
| 500 - 950 | PHP206.126 | PHP10,306.30 |
| 1000 + | PHP202.003 | PHP10,100.15 |
*price indicative
- RS Stock No.:
- 124-9024
- Mfr. Part No.:
- IRLB3034PBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 343A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 108nC | |
| Maximum Power Dissipation Pd | 375W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Height | 9.02mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 343A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 108nC | ||
Maximum Power Dissipation Pd 375W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Height 9.02mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MX
Infineon HEXFET Series MOSFET, 343A Maximum Continuous Drain Current, 40V Maximum Drain Source Voltage - IRLB3034PBF
This high-performance MOSFET is designed for demanding applications in automation and electronics. With an enhancement mode configuration and a maximum drain-source voltage of 40V, it ensures reliable operation in various conditions. The TO-220AB package type facilitates easy mounting, making it suitable for various designs. Its compact dimensions of 10.67mm in length, 4.83mm in width, and 9.02mm in height further enhance its versatility.
Features & Benefits
• Capable of handling a maximum continuous drain current of 343A
• Optimised for logic level drive for simplified control
• Designed for high-speed power switching requirements
• Wide operating temperature range from -55°C to +175°C
• Superior gate threshold of 1V to 2.5V benefits low voltage operations
Applications
• Ideal for DC motor drive systems
• Utilised in high efficiency synchronous rectification setups
• Suitable for uninterruptible power supplies
• Effective in hard switched and high-frequency circuits
What are the maximum power dissipation capabilities of this component?
The device can dissipate up to 375W under optimal conditions, allowing it to manage significant heat loads in demanding applications.
How does the low RDS(on) contribute to performance?
The low on-resistance of 2mΩ reduces energy losses, enabling higher efficiency and cooler operation, essential for high current applications.
Can this MOSFET be used in automation systems?
Yes, due to its high current capacity and reliable switching performance, it is well-suited for various automation applications, enhancing efficiency and control.
What mounting options does this component offer?
It employs a through-hole mounting type, simplifying integration into various circuit designs while ensuring secure connections.
Related links
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