Infineon HEXFET Type N-Channel MOSFET, 343 A, 40 V Enhancement, 3-Pin TO-220 IRLB3034PBF

RS Stock No.:: 124-9024
Mfr. Part No.:: IRLB3034PBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 343 A, 40 V Enhancement, 3-Pin TO-220 IRLB3034PBF

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Subtotal (1 tube of 50 units)*

PHP9,049.75

(exc. VAT)

PHP10,135.70

(inc. VAT)

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In Stock

100 unit(s) ready to ship from another location

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Units	Per Unit	Per Tube*
50 - 50	PHP180.995	PHP9,049.75
100 - 200	PHP177.376	PHP8,868.80
250 - 450	PHP173.828	PHP8,691.40
500 - 950	PHP170.352	PHP8,517.60
1000 +	PHP166.945	PHP8,347.25

*price indicative

RS Stock No.:: 124-9024
Mfr. Part No.:: IRLB3034PBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	343A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	2mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	108nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	375W
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Width	4.83 mm
	Height	9.02mm
	Length	10.67mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 343A
	Maximum Drain Source Voltage Vds 40V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 2mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 108nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 375W
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Width 4.83 mm
	Height 9.02mm
	Length 10.67mm
	Standards/Approvals No
	Automotive Standard No

COO (Country of Origin):: MX

Infineon HEXFET Series MOSFET, 343A Maximum Continuous Drain Current, 40V Maximum Drain Source Voltage - IRLB3034PBF

This high-performance MOSFET is designed for demanding applications in automation and electronics. With an enhancement mode configuration and a maximum drain-source voltage of 40V, it ensures reliable operation in various conditions. The TO-220AB package type facilitates easy mounting, making it suitable for various designs. Its compact dimensions of 10.67mm in length, 4.83mm in width, and 9.02mm in height further enhance its versatility.

Features & Benefits

• Capable of handling a maximum continuous drain current of 343A

• Optimised for logic level drive for simplified control

• Designed for high-speed power switching requirements

• Wide operating temperature range from -55°C to +175°C

• Superior gate threshold of 1V to 2.5V benefits low voltage operations

Applications

• Ideal for DC motor drive systems

• Utilised in high efficiency synchronous rectification setups

• Suitable for uninterruptible power supplies

• Effective in hard switched and high-frequency circuits

What are the maximum power dissipation capabilities of this component?

The device can dissipate up to 375W under optimal conditions, allowing it to manage significant heat loads in demanding applications.

How does the low RDS(on) contribute to performance?

The low on-resistance of 2mΩ reduces energy losses, enabling higher efficiency and cooler operation, essential for high current applications.

Can this MOSFET be used in automation systems?

Yes, due to its high current capacity and reliable switching performance, it is well-suited for various automation applications, enhancing efficiency and control.

What mounting options does this component offer?

It employs a through-hole mounting type, simplifying integration into various circuit designs while ensuring secure connections.