onsemi NDT Type P-Channel MOSFET, 7.5 A, 30 V Enhancement, 4-Pin SOT-223

RS Stock No.:: 124-1359
Mfr. Part No.:: NDT456P
Manufacturer:: onsemi

onsemi NDT Type P-Channel MOSFET, 7.5 A, 30 V Enhancement, 4-Pin SOT-223

This image is representative of the product range

Subtotal (1 reel of 4000 units)*

PHP256,160.00

(exc. VAT)

PHP286,880.00

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

4,000 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit	Per Reel*
4000 +	PHP64.04	PHP256,160.00

*price indicative

RS Stock No.:: 124-1359
Mfr. Part No.:: NDT456P
Manufacturer:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	7.5A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOT-223
	Series	NDT
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	54mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	-1.2V
	Typical Gate Charge Qg @ Vgs	47nC
	Minimum Operating Temperature	-65°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	3W
	Maximum Operating Temperature	150°C
	Width	3.7 mm
	Length	6.7mm
	Height	1.7mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 7.5A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOT-223
	Series NDT
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 54mΩ
	Channel Mode Enhancement
	Forward Voltage Vf -1.2V
	Typical Gate Charge Qg @ Vgs 47nC
	Minimum Operating Temperature -65°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 3W
	Maximum Operating Temperature 150°C
	Width 3.7 mm
	Length 6.7mm
	Height 1.7mm
	Standards/Approvals No
	Automotive Standard No

Enhancement Mode P-Channel MOSFET, ON Semiconductor

ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:

• Voltage controlled P-Channel small signal switch

• High-Density cell design

• High saturation current

• Superior switching

• Great rugged and reliable performance

• DMOS technology

Applications:

• Load Switching

• DC/DC converter

• Battery protection

• Power management control

• DC motor control

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.