STMicroelectronics STB Series N channel-Channel MOSFET, 56 A, 250 V Enhancement Mode, 3-Pin TO-263 STB25N018M9

N

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Subtotal (1 unit)*

PHP357.02

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PHP399.86

(inc. VAT)

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Units
Per Unit
1 - 9PHP357.02
10 - 24PHP314.27
25 - 99PHP282.58
100 - 499PHP242.61
500 +PHP201.25

*price indicative

RS Stock No.:
839-144
Mfr. Part No.:
STB25N018M9
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

56A

Maximum Drain Source Voltage Vds

250V

Series

STB Series

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

18mΩ

Channel Mode

Enhancement Mode

Forward Voltage Vf

1.6V

Typical Gate Charge Qg @ Vgs

85nC

Maximum Power Dissipation Pd

320W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30V

Maximum Operating Temperature

150°C

Height

4.5mm

Length

10.3mm

Standards/Approvals

ROHS

Width

10mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET is an N-channel super-junction component built on Advanced MDmesh M9 technology. It enables smaller more Compact layouts without compromising thermal capacity.

D2PAK surface-mount assembly package style

Silicon-based multi-drain manufacturing process

Low gate charge with outstanding efficiency

Enhanced dv/dt capability and avalanche tested

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