STMicroelectronics STH280N10F8-6 N channel-Channel Power MOSFET, 292 A, 100 V Enhancement Mode, 3-Pin H2PAK

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PHP247.11

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PHP276.76

(inc. VAT)

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Units
Per Unit
1 - 9PHP247.11
10 - 24PHP239.55
25 - 99PHP235.23
100 - 499PHP199.63
500 +PHP187.75

*price indicative

RS Stock No.:
800-458
Mfr. Part No.:
STH280N10F8-6
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

292A

Maximum Drain Source Voltage Vds

100V

Series

STH280N10F8-6

Package Type

H2PAK

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.9mΩ

Channel Mode

Enhancement Mode

Typical Gate Charge Qg @ Vgs

177nC

Maximum Power Dissipation Pd

341W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

4V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Length

10.4mm

Height

15.8mm

Width

4.7mm

Standards/Approvals

ECOPACK

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics 100 V N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure.

175 °C maximum operating junction temperature

100% avalanche tested

Excellent FoM (figure of merit)

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