onsemi FDN P-Channel MOSFET, 2 A, 20 V, 3-Pin SOT-23 FDN340P
- RS Stock No.:
- 838-639
- Mfr. Part No.:
- FDN340P
- Manufacturer:
- onsemi
N
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 25 units)*
PHP349.45
(exc. VAT)
PHP391.375
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from March 26, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tape* |
|---|---|---|
| 25 - 225 | PHP13.978 | PHP349.45 |
| 250 - 1225 | PHP11.323 | PHP283.08 |
| 1250 - 2475 | PHP8.667 | PHP216.68 |
| 2500 + | PHP6.786 | PHP169.65 |
*price indicative
- RS Stock No.:
- 838-639
- Mfr. Part No.:
- FDN340P
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | P-Channel | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | FDN | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.5W | |
| Typical Gate Charge Qg @ Vgs | 7.2nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.9mm | |
| Height | 1.4mm | |
| Width | 1.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type P-Channel | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series FDN | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.5W | ||
Typical Gate Charge Qg @ Vgs 7.2nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 8V | ||
Maximum Operating Temperature 150°C | ||
Length 2.9mm | ||
Height 1.4mm | ||
Width 1.4mm | ||
Automotive Standard No | ||
The onsemi P-Channel MOSFET is designed for efficient switching applications with reduced on-state resistance and low gate charge. This device excels in power management and load switching for portable electronics.
Capable of handling 2 A current with a maximum rating of 20 V
Utilises Advanced technology to achieve low on-resistance at multiple gate voltages
Designed with high power handling in an SOT-23 package for improved thermal performance
Pb-Free, Halogen Free/BFR Free, ensuring compliance with environmental standards
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