P-Channel MOSFET, 2 A, 20 V, 3-Pin SOT-23 Nexperia NX2301P,215
- RS Stock No.:
- 780-5376
- Mfr. Part No.:
- NX2301P,215
- Manufacturer:
- Nexperia
Bulk discount available
Subtotal (1 pack of 100 units)**
PHP509.60
(exc. VAT)
PHP570.80
(inc. VAT)
600 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for over PHP7,000.00 (ex VAT)
Units | Per Unit | Per Pack** |
|---|---|---|
| 100 - 100 | PHP5.096 | PHP509.60 |
| 200 - 400 | PHP4.943 | PHP494.30 |
| 500 - 900 | PHP4.795 | PHP479.50 |
| 1000 - 1900 | PHP4.651 | PHP465.10 |
| 2000 + | PHP4.511 | PHP451.10 |
**price indicative
- RS Stock No.:
- 780-5376
- Mfr. Part No.:
- NX2301P,215
- Manufacturer:
- Nexperia
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Nexperia | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 2 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 120 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.1V | |
| Minimum Gate Threshold Voltage | 0.5V | |
| Maximum Power Dissipation | 400 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Length | 3mm | |
| Typical Gate Charge @ Vgs | 4.5 nC | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 1.4mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1mm | |
Select all | ||
|---|---|---|
Manufacturer Nexperia | ||
Channel Type P | ||
Maximum Continuous Drain Current 2 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 120 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.1V | ||
Minimum Gate Threshold Voltage 0.5V | ||
Maximum Power Dissipation 400 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Length 3mm | ||
Typical Gate Charge @ Vgs 4.5 nC | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 1.4mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 1mm | ||