Vishay TrenchFET N channel-Channel MOSFET, 158 A, 40 V Enhancement, 8-Pin PowerPAK SO-8 SIR5404DP-T1-UE3
- RS Stock No.:
- 735-216
- Mfr. Part No.:
- SIR5404DP-T1-UE3
- Manufacturer:
- Vishay
N
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
PHP131.36
(exc. VAT)
PHP147.12
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from November 09, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 1 - 9 | PHP131.36 |
| 10 - 24 | PHP85.25 |
| 25 - 99 | PHP44.37 |
| 100 - 499 | PHP43.50 |
| 500 + | PHP42.63 |
*price indicative
- RS Stock No.:
- 735-216
- Mfr. Part No.:
- SIR5404DP-T1-UE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 158A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPAK SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0026Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 83.3W | |
| Typical Gate Charge Qg @ Vgs | 61.5nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Length | 6.25mm | |
| Width | 5.26 mm | |
| Height | 1.12mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 158A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPAK SO-8 | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0026Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 83.3W | ||
Typical Gate Charge Qg @ Vgs 61.5nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Length 6.25mm | ||
Width 5.26 mm | ||
Height 1.12mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay N channel MOSFET is built for high-efficiency power conversion and control in demanding electronic systems. it ensures robust performance with comprehensive testing, while maintaining compliance with environmental standards. its versatility makes it Ideal for applications requiring reliable rectification, Compact dc/dc solutions, and precise motor drive control.
Provides 100% Rg and UIS testing for proven reliability
Ensures RoHS compliance for environmental safety
Delivers halogen-free construction for eco-friendly design
Supports synchronous rectification for efficient power conversion
Enables motor drive control with dependable switching performance
Related links
- Vishay TrenchFET N channel-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK 1212-8S SISS586DN-T1-UE3
- Vishay TrenchFET N channel-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK SO-8 SIR5406DP-T1-UE3
- Vishay TrenchFET N channel-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK SO-8 SIR5408DP-T1-UE3
- Vishay TrenchFET N channel-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK SO-8 SIR5402DP-T1-UE3
- Vishay TrenchFET N channel-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK SO-8 SIR532DP-T1-UE3
- Vishay TrenchFET N channel-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK 1212-8S SISS516DN-T1-UE3
- Vishay TrenchFET N channel-Channel MOSFET 60 V Enhancement, 8-Pin 1212-F SISD4604DN-T1-UE3
- Vishay TrenchFET N channel-Channel MOSFET 40 V Enhancement, 8-Pin 1212-F SISD4402DN-T1-UE3