Vishay SiD N channel-Channel MOSFET, 291 A, 40 V Enhancement, 8-Pin PowerPAK SO-8 SiDR402EP

N
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Subtotal (1 unit)*

PHP218.35

(exc. VAT)

PHP244.55

(inc. VAT)

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Units
Per Unit
1 - 9PHP218.35
10 - 24PHP141.80
25 - 99PHP74.81
100 - 499PHP72.20
500 +PHP70.46

*price indicative

RS Stock No.:
735-145
Mfr. Part No.:
SiDR402EP
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

291A

Maximum Drain Source Voltage Vds

40V

Series

SiD

Package Type

PowerPAK SO-8

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.00088Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

10V

Forward Voltage Vf

40V

Typical Gate Charge Qg @ Vgs

110nC

Maximum Power Dissipation Pd

150W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

6mm

Standards/Approvals

RoHS

Height

2mm

Length

7mm

Automotive Standard

No

COO (Country of Origin):
DE
The Vishay N-Channel MOSFET rated for 40V drain-source voltage, engineered for high-efficiency synchronous rectification in AI power server DC/DC converters. It provides ultra-low on-resistance around 0.88mΩ at 10V gate drive to minimize conduction losses in high-current power stages.

65A continuous drain current at TA=25°C

Low RDS(on) x Qg figure-of-merit for optimal switching

Material categorization qualification for reliability

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