Vishay SiD N channel-Channel MOSFET, 148 A, 100 V Enhancement, 8-Pin PowerPAK SO-8 SiDR510EP

N

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PHP258.37

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PHP289.37

(inc. VAT)

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Units
Per Unit
1 - 9PHP258.37
10 - 24PHP167.89
25 - 99PHP87.86
100 - 499PHP86.12
500 +PHP83.51

*price indicative

RS Stock No.:
735-163
Mfr. Part No.:
SiDR510EP
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

148A

Maximum Drain Source Voltage Vds

100V

Series

SiD

Package Type

PowerPAK SO-8

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.0036Ω

Channel Mode

Enhancement

Forward Voltage Vf

100V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

54nC

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

150W

Maximum Operating Temperature

175°C

Width

6mm

Height

2mm

Length

7mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
DE
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency switching in AI power server DC/DC converters and synchronous rectification circuits. It achieves very low on-resistance of 1.7mΩ maximum at 10V gate drive for minimal conduction losses in high-current applications

94A continuous drain current at TA=25°C

54.3nC typical total gate charge for fast switching

-55°C to +175°C extended junction temperature range

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