ROHM R8011KNZ4 Type N-Channel Single MOSFETs, 800 V Enhancement, 3-Pin TO-247 R8011KNZ4C13
- RS Stock No.:
- 687-457
- Mfr. Part No.:
- R8011KNZ4C13
- Manufacturer:
- ROHM
N
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Subtotal (1 bag of 2 units)*
PHP610.68
(exc. VAT)
PHP683.96
(inc. VAT)
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- Shipping from January 19, 2026
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Units | Per Unit | Per Bag* |
|---|---|---|
| 2 - 18 | PHP305.34 | PHP610.68 |
| 20 - 98 | PHP268.805 | PHP537.61 |
| 100 - 198 | PHP241.405 | PHP482.81 |
| 200 + | PHP190.075 | PHP380.15 |
*price indicative
- RS Stock No.:
- 687-457
- Mfr. Part No.:
- R8011KNZ4C13
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | R8011KNZ4 | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.45Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Maximum Power Dissipation Pd | 139W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.22mm | |
| Standards/Approvals | RoHS | |
| Width | 16.24 mm | |
| Length | 40mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds 800V | ||
Series R8011KNZ4 | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.45Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Maximum Power Dissipation Pd 139W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 5.22mm | ||
Standards/Approvals RoHS | ||
Width 16.24 mm | ||
Length 40mm | ||
Automotive Standard No | ||
The ROHM Power MOSFET designed to deliver exceptional efficiency and reliability in various applications. With a voltage rating of 800V and a maximum continuous drain current of 11A, this component excels in demanding environments. Engineered for fast switching, it features a low on-resistance of just 0.45Ω, enabling reduced power loss and efficient thermal management. Its robust construction ensures compliance with environmental standards, including RoHS, making it a practical choice for modern electronic designs that prioritise sustainability along with performance.
Low on resistance ensures efficient power delivery
Fast switching capability optimises performance in high-speed applications
Robust construction supports parallel use, enhancing design flexibility
Compliant with RoHS standards, contributing to environmentally friendly designs
Wide operating temperature range from -55 to +150°C ensures reliability in extreme conditions
Thermal resistance ratings provide excellent heat management in compact designs
Effective gate charge characteristics allow for easier integration into existing circuits
Versatile applications in industrial, automotive, and consumer electronics sectors
Related links
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- Vishay EF Type N-Channel Single MOSFETs 800 V Enhancement, 3-Pin TO-220AB SIHP11N80AEF-GE3
- Vishay EF Type N-Channel Single MOSFETs 800 V Enhancement, 3-Pin TO-247AC
- Vishay EF Type N-Channel Single MOSFETs 800 V Enhancement, 3-Pin TO-220AB
- STMicroelectronics Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252
- STMicroelectronics Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
