ROHM R8019KNZ4 Type N-Channel Single MOSFETs, 800 V Enhancement, 3-Pin TO-247 R8019KNZ4C13
- RS Stock No.:
- 687-367
- Mfr. Part No.:
- R8019KNZ4C13
- Manufacturer:
- ROHM
N
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Subtotal (1 bag of 2 units)*
PHP829.90
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PHP929.48
(inc. VAT)
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- Shipping from January 19, 2026
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Units | Per Unit | Per Bag* |
|---|---|---|
| 2 - 18 | PHP414.95 | PHP829.90 |
| 20 - 98 | PHP365.365 | PHP730.73 |
| 100 - 198 | PHP327.96 | PHP655.92 |
| 200 + | PHP257.93 | PHP515.86 |
*price indicative
- RS Stock No.:
- 687-367
- Mfr. Part No.:
- R8019KNZ4C13
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | R8019KNZ4 | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.265Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Maximum Power Dissipation Pd | 208W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 16.24 mm | |
| Height | 5.22mm | |
| Length | 40mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds 800V | ||
Series R8019KNZ4 | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.265Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Maximum Power Dissipation Pd 208W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 16.24 mm | ||
Height 5.22mm | ||
Length 40mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ROHM N channel MOSFET designed for high-efficiency performance in electronic applications. Featuring a maximum Drain-Source voltage of 800V and a continuous drain current capability of 19A, this device effectively manages significant power loads while maintaining low on-resistance. Engineered with advanced switching capabilities, it provides rapid response times essential for efficient circuit operation. The encapsulation in a TO-247G package ensures straightforward mounting and excellent thermal performance, making it ideal for power management in everything from industrial systems to consumer electronics.
Low on resistance of just 0.265Ω, enhancing energy efficiency
Rated for continuous drain current of ±19A, allowing substantial power handling
Fast switching performance optimises the operation of dynamic circuits
Pb free lead plating ensures compliance with environmental standards
Robust avalanche ratings support reliable operation in transient conditions
Ideal for parallel usage, simplifying multiple device configurations.
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