Vishay SUM50010EL Type N-Channel Single MOSFETs, 150 A, 60 V Enhancement, 3-Pin PowerPAK
- RS Stock No.:
- 653-151
- Mfr. Part No.:
- SUM50010EL-GE3
- Manufacturer:
- Vishay
N
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PHP225.31
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PHP252.35
(inc. VAT)
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- 800 unit(s) ready to ship from another location
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Tape(s) | Per Tape |
|---|---|
| 1 - 9 | PHP225.31 |
| 10 - 24 | PHP218.35 |
| 25 - 99 | PHP214.00 |
| 100 - 499 | PHP182.68 |
| 500 + | PHP171.37 |
*price indicative
- RS Stock No.:
- 653-151
- Mfr. Part No.:
- SUM50010EL-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK | |
| Series | SUM50010EL | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.00173Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 375W | |
| Typical Gate Charge Qg @ Vgs | 192nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK | ||
Series SUM50010EL | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.00173Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 375W | ||
Typical Gate Charge Qg @ Vgs 192nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay TrenchFET Gen IV N-Channel Power MOSFET rated for 60 V drain-source voltage. It features very low gate-drain charge (Qgd) to minimize power loss during switching and supports high current handling up to 150 A. Packaged in a D2PAK, it's Ideal for DC/DC converters, motor drives, battery management, and secondary synchronous rectification in power supplies2.
Pb Free
Halogen free
RoHS compliant
Related links
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