Vishay SI2122DS Type N-Channel Single MOSFETs, 2.17 A, 100 V Enhancement, 3-Pin PowerPAK SI2122DS-T1-GE3

N

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Subtotal (1 reel of 3000 units)*

PHP38,898.00

(exc. VAT)

PHP43,566.00

(inc. VAT)

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3000 +PHP12.966PHP38,898.00

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RS Stock No.:
653-085
Mfr. Part No.:
SI2122DS-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

2.17A

Maximum Drain Source Voltage Vds

100V

Series

SI2122DS

Package Type

PowerPAK

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.160Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

2.9nC

Maximum Power Dissipation Pd

1.6W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-channel MOSFET designed for compact, high-efficiency switching in low-power applications. It supports up to 100 V drain-source voltage. Packaged in a SOT-23 format, it utilizes TrenchFET Gen IV technology for low RDS(on), fast switching, and efficient thermal performance in space-constrained designs.

Pb Free

Halogen free

RoHS compliant

Used in LED backlighting

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