Vishay SQ2308FES Type N-Channel Single MOSFETs, 2.3 A, 60 V Enhancement, 3-Pin SOT-23
- RS Stock No.:
- 653-060
- Mfr. Part No.:
- SQ2308FES-T1_GE3
- Manufacturer:
- Vishay
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*price indicative
- RS Stock No.:
- 653-060
- Mfr. Part No.:
- SQ2308FES-T1_GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.3A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SQ2308FES | |
| Package Type | SOT-23 | |
| Mount Type | PCB | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.15Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 5.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.12mm | |
| Length | 3.04mm | |
| Width | 2.64mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.3A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SQ2308FES | ||
Package Type SOT-23 | ||
Mount Type PCB | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.15Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 5.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Height 1.12mm | ||
Length 3.04mm | ||
Width 2.64mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Vishay SQ2308FES Series Single MOSFETs, 60V Maximum Drain Source Voltage, 2.3A Maximum Continuous Drain Current - SQ2308FES-T1_GE3
This single MOSFET device is a compact N-channel enhancement-mode transistor designed for general switching and amplification tasks in PCB-mounted circuits. It operates across a wide thermal range suitable for demanding environments and is supplied in a SOT-23 surface-mount package for space-conscious board layouts.
Features and Benefits:
• 60V drain-source rating enables higher-voltage switching
• 2.3A continuous drain current allows moderate load handling
• 0.15Ω low Rds(on) reduces conduction losses
• 2W power dissipation supports steady-state thermal loading
• 5.3nC typical gate charge offers responsive switching performance
• 20V maximum gate voltage provides robust gate-drive margin
• 2.3A continuous drain current allows moderate load handling
• 0.15Ω low Rds(on) reduces conduction losses
• 2W power dissipation supports steady-state thermal loading
• 5.3nC typical gate charge offers responsive switching performance
• 20V maximum gate voltage provides robust gate-drive margin
Applications
• Suitable for automotive sensor interface circuits
• Ideal for DC/DC converter switching stages
• Used with motor-driver pre-drivers and low-power actuators
• Can be used for load switching in telematics modules
• Suitable for battery-management protection and control
• Ideal for DC/DC converter switching stages
• Used with motor-driver pre-drivers and low-power actuators
• Can be used for load switching in telematics modules
• Suitable for battery-management protection and control
What ambient temperatures can this component endure in operation?
It is rated to function from -55°C up to 175°C, permitting use in extreme thermal environments.
How is the device packaged for PCB assembly?
It arrives in a SOT-23 surface-mount package with three pins optimised for automated SMT placement.
What gate-drive limitations should designers observe?
The gate-to-source voltage must not exceed 20V to avoid gate-oxide stress.
How does its channel topology affect circuit design?
As an N-channel enhancement device, it requires a positive gate voltage relative to the source to conduct, suitable for low-side switching.
Related links
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