Vishay SQ2308FES Type N-Channel Single MOSFETs, 2.3 A, 60 V Enhancement, 3-Pin SOT-23 SQ2308FES-T1_GE3

RS Stock No.:: 653-059
Mfr. Part No.:: SQ2308FES-T1_GE3
Manufacturer:: Vishay

Vishay SQ2308FES Type N-Channel Single MOSFETs, 2.3 A, 60 V Enhancement, 3-Pin SOT-23 SQ2308FES-T1_GE3

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Vishay SQ2308FES Type N-Channel Single MOSFETs, 2.3 A, 60 V Enhancement, 3-Pin SOT-23

RS Stock No.: 653-060

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RS Stock No.:: 653-059
Mfr. Part No.:: SQ2308FES-T1_GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	Single MOSFETs
	Channel Type	Type N
	Maximum Continuous Drain Current Id	2.3A
	Maximum Drain Source Voltage Vds	60V
	Package Type	SOT-23
	Series	SQ2308FES
	Mount Type	PCB
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.15Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	2W
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	5.3nC
	Maximum Operating Temperature	175°C
	Width	2.64mm
	Height	1.12mm
	Standards/Approvals	RoHS
	Length	3.04mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Vishay
	Product Type Single MOSFETs
	Channel Type Type N
	Maximum Continuous Drain Current Id 2.3A
	Maximum Drain Source Voltage Vds 60V
	Package Type SOT-23
	Series SQ2308FES
	Mount Type PCB
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.15Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 2W
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 5.3nC
	Maximum Operating Temperature 175°C
	Width 2.64mm
	Height 1.12mm
	Standards/Approvals RoHS
	Length 3.04mm
	Automotive Standard AEC-Q101

Datasheet - SQ2308FES-T1_GE3

Vishay SQ2308FES Series Single MOSFETs, 60V Maximum Drain Source Voltage, 2.3A Maximum Continuous Drain Current - SQ2308FES-T1_GE3

This single MOSFET device is a compact N-channel enhancement-mode transistor designed for general switching and amplification tasks in PCB-mounted circuits. It operates across a wide thermal range suitable for demanding environments and is supplied in a SOT-23 surface-mount package for space-conscious board layouts.

Features and Benefits:

• 60V drain-source rating enables higher-voltage switching
• 2.3A continuous drain current allows moderate load handling
• 0.15Ω low Rds(on) reduces conduction losses
• 2W power dissipation supports steady-state thermal loading
• 5.3nC typical gate charge offers responsive switching performance
• 20V maximum gate voltage provides robust gate-drive margin

Applications

• Suitable for automotive sensor interface circuits
• Ideal for DC/DC converter switching stages
• Used with motor-driver pre-drivers and low-power actuators
• Can be used for load switching in telematics modules
• Suitable for battery-management protection and control

What ambient temperatures can this component endure in operation?

It is rated to function from -55°C up to 175°C, permitting use in extreme thermal environments.

How is the device packaged for PCB assembly?

It arrives in a SOT-23 surface-mount package with three pins optimised for automated SMT placement.

What gate-drive limitations should designers observe?

The gate-to-source voltage must not exceed 20V to avoid gate-oxide stress.

How does its channel topology affect circuit design?

As an N-channel enhancement device, it requires a positive gate voltage relative to the source to conduct, suitable for low-side switching.