ROHM RD3 Type N-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 RD3L04BBLHRBTL
- RS Stock No.:
- 646-545
- Mfr. Part No.:
- RD3L04BBLHRBTL
- Manufacturer:
- ROHM
N
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Subtotal (1 tape of 10 units)*
PHP528.91
(exc. VAT)
PHP592.38
(inc. VAT)
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In Stock
- 100 unit(s) ready to ship from another location
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Units | Per Unit | Per Tape* |
|---|---|---|
| 10 - 90 | PHP52.891 | PHP528.91 |
| 100 - 490 | PHP46.541 | PHP465.41 |
| 500 - 990 | PHP41.756 | PHP417.56 |
| 1000 + | PHP33.057 | PHP330.57 |
*price indicative
- RS Stock No.:
- 646-545
- Mfr. Part No.:
- RD3L04BBLHRBTL
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | RD3 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 13.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 53W | |
| Typical Gate Charge Qg @ Vgs | 12.1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Height | 2.3mm | |
| Width | 6.8 mm | |
| Length | 10.50mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds 60V | ||
Series RD3 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 13.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 53W | ||
Typical Gate Charge Qg @ Vgs 12.1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101, RoHS | ||
Height 2.3mm | ||
Width 6.8 mm | ||
Length 10.50mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM P channel 60 volt 40 ampere power metal oxide semiconductor field effect transistor features lead free plating and is restriction of hazardous substances compliant. It is one hundred percent avalanche tested.
Low on-resistance
AEC-Q101 qualified
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