Infineon IPD Type N-Channel MOSFET, 288 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60R007CM8XTMA1

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PHP2,389.63

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PHP2,676.39

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RS Stock No.:
348-993
Mfr. Part No.:
IPDQ60R007CM8XTMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

288A

Maximum Drain Source Voltage Vds

600V

Series

IPD

Package Type

PG-HDSOP-22

Mount Type

Surface

Pin Count

22

Maximum Drain Source Resistance Rds

7mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1249W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

37nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

COO (Country of Origin):
MY

Infineon IPD Series MOSFET, 600V Drain Source Voltage, 288A Continuous Drain Current - IPDQ60R007CM8XTMA1


This MOSFET is a power-switching transistor designed for high-voltage, high-current applications in surface-mounted electronics. It operates across a wide temperature range and is intended for use where rapid switching and substantial continuous current handling are required in demanding electrical systems.

Features and Benefits:


• 600V drain voltage enables high-voltage system compatibility
• 7 mΩ low on-resistance reduces conduction losses
• 288A continuous current supports high-current loads
• 1249W power dissipation allows sustained thermal handling
• 37 nC typical gate charge enables faster switching transitions
• 30V gate tolerance protects against gate overdrive excursions

Applications


• Used for power supplies in industrial equipment
• Suitable for motor-drive stages in traction systems
• Ideal for high-current converters in renewable installations
• Can be used for DC-DC conversion in telecom racks
• Used with high-temperature electronics in automotive subsystems

What package type should designers expect for PCB layout?


It is supplied in a 22-pin PG-HDSOP-22 surface-mount package suitable for compact board layouts and thermal pad arrangements.

How does the device perform in elevated ambient conditions?


The component is specified to operate up to 150 °C, allowing use in high-temperature environments with appropriate thermal management.

What gate-drive considerations are required for switching?


The gate must be driven within ±30V limits and the typical gate charge of 37 nC should be accounted for when sizing the driver to achieve desired switching speeds.

Is the device suitable for low-temperature applications?


The part is rated down to -55 °C, enabling deployment in cold-climate systems with assured electrical performance.

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