Infineon IPD Type N-Channel MOSFET, 113 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T017S7AXTMA1

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PHP1,343.19

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PHP1,504.37

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RS Stock No.:
349-196
Mfr. Part No.:
IPDQ60T017S7AXTMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

113A

Maximum Drain Source Voltage Vds

600V

Series

IPD

Package Type

PG-HDSOP-22

Mount Type

Surface

Pin Count

22

Maximum Drain Source Resistance Rds

0.017Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

500W

Typical Gate Charge Qg @ Vgs

196nC

Forward Voltage Vf

0.82V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

AEC Q101, RoHS, JEDEC

Automotive Standard

AEC-Q101

COO (Country of Origin):
MY
The Infineon CoolMOS S7TA enables the best price performance for low frequency switching applications. The embedded temperature sensor increases junction temperature sensing accuracy and robustness while keeping an easy and seamless implementation. CoolMOS S7TA is optimized for static switching and high current applications. The new temperature sensor enhances S7A features, allowing the best possible utilization of the power transistor.

Optimized price performance in low frequency switching applications

High pulse current capability

Seamless diagnostics at lowest system cost

Increased system performance

Minimized conduction losses

More reliability and longer system lifetime

Shock and vibration resistance

No contact arcing or bouncing

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