Infineon OptiMOS Type N-Channel MOSFET, 381 A, 40 V Enhancement, 8-Pin PG-WSON-8 BSC009N04LSSCATMA1
- RS Stock No.:
- 284-697
- Mfr. Part No.:
- BSC009N04LSSCATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
PHP1,224.69
(exc. VAT)
PHP1,371.655
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from August 17, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 45 | PHP244.938 | PHP1,224.69 |
| 50 - 95 | PHP232.754 | PHP1,163.77 |
| 100 - 495 | PHP215.596 | PHP1,077.98 |
| 500 - 995 | PHP198.438 | PHP992.19 |
| 1000 + | PHP190.976 | PHP954.88 |
*price indicative
- RS Stock No.:
- 284-697
- Mfr. Part No.:
- BSC009N04LSSCATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 381A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PG-WSON-8 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 188W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 381A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PG-WSON-8 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 188W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
Infineon OptiMOS Series MOSFET, 40V Maximum Drain Source Voltage, 381A Maximum Continuous Drain Current - BSC009N04LSSCATMA1
This MOSFET is a high-current N-channel switch designed for surface-mount power conversion and control applications. It operates across a wide ambient range and is intended for systems that demand substantial current handling and compact mounting using a PG-WSON-8 package.
Features and Benefits:
• 381A continuous drain current enables high-load switching capability
• 40V drain-source rating supports medium-voltage power stages
• 1V forward voltage reduces conduction losses under load
• 188W maximum dissipation permits substantial power handling
• Type N enhancement mode provides standard MOSFET switching behaviour
• 20V gate-source tolerance allows robust gate-drive margins
• 40V drain-source rating supports medium-voltage power stages
• 1V forward voltage reduces conduction losses under load
• 188W maximum dissipation permits substantial power handling
• Type N enhancement mode provides standard MOSFET switching behaviour
• 20V gate-source tolerance allows robust gate-drive margins
Applications
• Suitable for high-current DC-DC converter stages
• Ideal for motor-driver half-bridge configurations
• Used with server power-supply switching networks
• Can be used for telecom power distribution modules
• Appropriate for industrial inverter intermediate stages
• Ideal for motor-driver half-bridge configurations
• Used with server power-supply switching networks
• Can be used for telecom power distribution modules
• Appropriate for industrial inverter intermediate stages
What temperature extremes can the device endure in operation?
It maintains functionality from -55 °C up to 175 °C, allowing use in harsh thermal environments and elevated-junction designs.
What mounting method does the device require on a PCB?
The component is supplied in a PG-WSON-8 package intended for surface mounting to enable compact board layouts and low-inductance connections.
How does the gate-drive voltage affect switching?
The gate-source voltage range permits up to 20V, giving margin for fast switching with common gate-drive voltages while avoiding overdrive that could stress the gate.
Is the device suitable where environmentally restricted materials are required?
It complies with RoHS directives, meeting restricted-substance requirements for material selection.
Related links
- Infineon OptiMOS Type N-Channel MOSFET 40 V Enhancement, 8-Pin PG-WSON-8 BSC009N04LSSCATMA1
- Infineon OptiMOS Type N-Channel MOSFET 40 V Enhancement, 8-Pin PG-WSON-8 BSC007N04LS6SCATMA1
- Infineon OptiMOS Type N-Channel MOSFET 150 V Enhancement, 8-Pin PG-WSON-8 BSC110N15NS5SCATMA1
- Infineon OptiMOS Type N-Channel MOSFET 150 V Enhancement, 8-Pin PG-WSON-8 BSC093N15NS5SCATMA1
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 8-Pin PG-WSON-8 BSC033N08NS5SCATMA1
- Infineon OptiMOS Type N-Channel MOSFET 150 V Enhancement, 8-Pin PG-WSON-8 BSC160N15NS5SCATMA1
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 8-Pin PG-WSON-8 BSC030N10NS5SCATMA1
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 8-Pin PG-WSON-8 BSC023N08NS5SCATMA1