Infineon OptiMOS Type N-Channel MOSFET, 56 A, 150 V Enhancement, 8-Pin PG-WSON-8 BSC160N15NS5SCATMA1

This image is representative of the product range

Currently unavailable
Sorry, we don't know when this will be back in stock.
RS Stock No.:
284-650
Mfr. Part No.:
BSC160N15NS5SCATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

56A

Maximum Drain Source Voltage Vds

150V

Package Type

PG-WSON-8

Series

OptiMOS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

16mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

115W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon OptiMOS Power MOSFET is engineered to deliver exceptional performance in high frequency switching applications. With a robust 150V rating, it serves as a reliable solution for industrial and automotive electronics. The dual side cooled PG WSON 8 package ensures minimal thermal resistance, allowing for efficient heat dissipation even under heavy load conditions. Designed for N channel operation, this MOSFET excels in synchronous rectification, making it Ideal for power management tasks where efficiency and reliability are paramount. Manufacturers can Trust this component to meet stringent requirements, delivering effective and stable performance in demanding environments.

Optimised for high frequency operation

Dual side cooling lowers thermal resistance

Pb free lead plating for RoHS compliance

Excellent gate charge performance boosts efficiency

Ideal for synchronous rectification applications

Operates at high temperatures without efficiency loss

Qualified to JEDEC standards for industry

Related links