ROHM RJ1 1 Type N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-263AB RJ1P04BBHTL1
- RS Stock No.:
- 264-883
- Mfr. Part No.:
- RJ1P04BBHTL1
- Manufacturer:
- ROHM
This image is representative of the product range
Bulk discount available
Subtotal (1 tape of 5 units)*
PHP708.69
(exc. VAT)
PHP793.735
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 100 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tape* |
|---|---|---|
| 5 - 45 | PHP141.738 | PHP708.69 |
| 50 - 95 | PHP134.58 | PHP672.90 |
| 100 - 495 | PHP124.806 | PHP624.03 |
| 500 - 995 | PHP114.856 | PHP574.28 |
| 1000 + | PHP110.492 | PHP552.46 |
*price indicative
- RS Stock No.:
- 264-883
- Mfr. Part No.:
- RJ1P04BBHTL1
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263AB | |
| Series | RJ1 | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 89W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 38.0nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263AB | ||
Series RJ1 | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 89W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 38.0nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Number of Elements per Chip 1 | ||
The ROHM Nch 100V 80A TO-263AB power MOSFET with low on-resistance and high power small mold package, suitable for switching.
Low on-resistance
High power small mold package (TO263AB)
Pb-free plating and RoHS compliant
100% UIS tested
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