ROHM RJ1 1 N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-263AB RJ1P04BBHTL1
- RS Stock No.:
- 264-883
- Mfr. Part No.:
- RJ1P04BBHTL1
- Manufacturer:
- ROHM
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 5 units)*
PHP1,132.00
(exc. VAT)
PHP1,267.85
(inc. VAT)
FREE delivery for orders over ₱5,000.00
In Stock
- 100 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tape* |
|---|---|---|
| 5 - 45 | PHP226.40 | PHP1,132.00 |
| 50 - 95 | PHP214.966 | PHP1,074.83 |
| 100 - 495 | PHP199.354 | PHP996.77 |
| 500 - 995 | PHP183.46 | PHP917.30 |
| 1000 + | PHP176.488 | PHP882.44 |
*price indicative
- RS Stock No.:
- 264-883
- Mfr. Part No.:
- RJ1P04BBHTL1
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263AB | |
| Series | RJ1 | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 89W | |
| Typical Gate Charge Qg @ Vgs | 38.0nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263AB | ||
Series RJ1 | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 89W | ||
Typical Gate Charge Qg @ Vgs 38.0nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Number of Elements per Chip 1 | ||
The ROHM Nch 100V 80A TO-263AB power MOSFET with low on-resistance and high power small mold package, suitable for switching.
Low on-resistance
High power small mold package (TO263AB)
Pb-free plating and RoHS compliant
100% UIS tested
Related links
- ROHM RJ1 1 N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263AB RJ1P10BBHTL1
- ROHM RJ1 1 N-Channel MOSFET 150 V Enhancement, 3-Pin TO-263AB RJ1R10BBHTL1
- ROHM RJ1 1 N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263AB RJ1P07CBHTL1
- ROHM RJ1 N-Channel Single MOSFETs 3-Pin TO-263AB RJ1R04BBHTL1
- ROHM RJ1N04BBHT N-Channel Single MOSFETs 3-Pin TO-263AB-3LSHYAD RJ1N04BBHTL1
- STMicroelectronics Single STripFET II 1 N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220 STP80NF55L-06
- STMicroelectronics Single STripFET V 1 N-Channel MOSFET 25 V Enhancement, 3-Pin TO-252 STD95N2LH5
- onsemi Single PowerTrench 1 N-Channel MOSFET 75 V Enhancement, 3-Pin TO-247 FDH038AN08A1