ROHM RJ1 1 Type N-Channel MOSFET, 105 A, 150 V Enhancement, 3-Pin TO-263AB RJ1R10BBHTL1
- RS Stock No.:
- 264-880
- Mfr. Part No.:
- RJ1R10BBHTL1
- Manufacturer:
- ROHM
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
PHP324.67
(exc. VAT)
PHP363.63
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 100 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 1 - 9 | PHP324.67 |
| 10 - 99 | PHP292.38 |
| 100 - 499 | PHP269.68 |
| 500 - 999 | PHP249.61 |
| 1000 + | PHP203.35 |
*price indicative
- RS Stock No.:
- 264-880
- Mfr. Part No.:
- RJ1R10BBHTL1
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 105A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-263AB | |
| Series | RJ1 | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8.2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 181W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 130nC | |
| Maximum Operating Temperature | 150°C | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 105A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-263AB | ||
Series RJ1 | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8.2mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 181W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 130nC | ||
Maximum Operating Temperature 150°C | ||
Number of Elements per Chip 1 | ||
The ROHM Nch 150V 170A TO-263AB power MOSFET with low on-resistance and high power small mold package, suitable for switching.
Low on-resistance
High power small mold package (TO263AB)
Pb-free plating and RoHS compliant
100% UIS tested
Related links
- ROHM RJ1 1 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263AB RJ1P07CBHTL1
- ROHM RJ1 1 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263AB RJ1P10BBHTL1
- ROHM RJ1 1 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263AB RJ1P04BBHTL1
- ROHM RJ1 Type N-Channel Single MOSFETs 3-Pin TO-263AB RJ1R04BBHTL1
- ROHM RX3R10BBH Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220 RX3R10BBHC16
- ROHM RX3R10BBH Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 7-Pin TO-263 IRFS4115TRL7PP
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 7-Pin TO-263
