ROHM R60 Type N-Channel MOSFET, 600 V Enhancement, 3-Pin SOT-223-3 R6002JND4TL1

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Subtotal (1 tape of 25 units)*

PHP680.75

(exc. VAT)

PHP762.50

(inc. VAT)

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Units
Per Unit
Per Tape*
25 - 75PHP27.23PHP680.75
100 - 225PHP25.869PHP646.73
250 - 475PHP23.949PHP598.73
500 - 975PHP22.064PHP551.60
1000 +PHP21.226PHP530.65

*price indicative

Packaging Options:
RS Stock No.:
264-855
Mfr. Part No.:
R6002JND4TL1
Manufacturer:
ROHM
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Brand

ROHM

Product Type

MOSFET

Channel Type

Type N

Maximum Drain Source Voltage Vds

600V

Package Type

SOT-223-3

Series

R60

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.25Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

6.6W

Maximum Gate Source Voltage Vgs

±30 V

Typical Gate Charge Qg @ Vgs

7.0nC

Forward Voltage Vf

1.7V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The ROHM 600V 1A SOT-223-3 Presto MOS with integrated high-speed diode is a power MOSFET with fast reverse recovery time, suitable for the switching applications. Which increases design flexibility while maintaining the industry’s fastest reverse recovery time optimized for EV charging stations and motor drive in home appliances such as refrigerators and Air Conditioners (ACs).

Fast reverse recovery time

Low on-resistance

Fast switching speed

Drive circuits can be simple

Pb-free plating and RoHS compliant

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