ROHM R60 Type N-Channel MOSFET, 600 V Enhancement, 3-Pin SOT-223-3 R6003JND4TL1

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Subtotal (1 tape of 10 units)*

PHP310.70

(exc. VAT)

PHP348.00

(inc. VAT)

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Units
Per Unit
Per Tape*
10 - 90PHP31.07PHP310.70
100 - 240PHP29.499PHP294.99
250 - 490PHP27.318PHP273.18
500 - 990PHP25.136PHP251.36
1000 +PHP24.263PHP242.63

*price indicative

Packaging Options:
RS Stock No.:
264-849
Mfr. Part No.:
R6003JND4TL1
Manufacturer:
ROHM
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Brand

ROHM

Product Type

MOSFET

Channel Type

Type N

Maximum Drain Source Voltage Vds

600V

Series

R60

Package Type

SOT-223-3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2.15Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±30 V

Maximum Power Dissipation Pd

7.8W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

8nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The ROHM 600V 1.3A SOT 223 3 Presto MOS with integrated high-speed diode is a power MOSFET with fast reverse recovery time, suitable for the switching applications. Which increases design flexibility while maintaining the industry’s fastest reverse recovery time optimized for EV charging stations and motor drive in home appliances such as refrigerators and Air Conditioners.

Fast reverse recovery time

Low on-resistance

Fast switching speed

Drive circuits can be simple

Pb-free plating and RoHS compliant

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