onsemi NTMFS Type N-Channel MOSFET, 154 A, 80 V Enhancement, 5-Pin DFN-5 NTMFS3D0N08XT1G
- RS Stock No.:
- 220-604
- Mfr. Part No.:
- NTMFS3D0N08XT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 tape of 5 units)*
PHP423.81
(exc. VAT)
PHP474.665
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 1,500 unit(s) ready to ship from another location
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Units | Per Unit | Per Tape* |
|---|---|---|
| 5 - 45 | PHP84.762 | PHP423.81 |
| 50 - 95 | PHP80.548 | PHP402.74 |
| 100 - 495 | PHP74.692 | PHP373.46 |
| 500 - 995 | PHP68.606 | PHP343.03 |
| 1000 + | PHP66.03 | PHP330.15 |
*price indicative
- RS Stock No.:
- 220-604
- Mfr. Part No.:
- NTMFS3D0N08XT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 154A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | DFN-5 | |
| Series | NTMFS | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 2.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 133W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Pb-Free, RoHS | |
| Height | 1mm | |
| Length | 6.15mm | |
| Width | 5.15 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 154A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type DFN-5 | ||
Series NTMFS | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 2.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 133W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Pb-Free, RoHS | ||
Height 1mm | ||
Length 6.15mm | ||
Width 5.15 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The ON Semiconductor Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.
Halogen Free
RoHS Compliant
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