onsemi NTMFS Type N-Channel MOSFET, 509 A, 40 V Enhancement, 5-Pin DFN-5 NTMFS0D4N04XMT1G
- RS Stock No.:
- 220-587
- Mfr. Part No.:
- NTMFS0D4N04XMT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 2 units)*
PHP483.14
(exc. VAT)
PHP541.12
(inc. VAT)
FREE delivery for orders over ₱5,000.00
Temporarily out of stock
- 1,500 unit(s) shipping from March 31, 2027
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Units | Per Unit | Per Tape* |
|---|---|---|
| 2 - 18 | PHP241.57 | PHP483.14 |
| 20 - 198 | PHP217.415 | PHP434.83 |
| 200 - 998 | PHP200.805 | PHP401.61 |
| 1000 - 1998 | PHP186.45 | PHP372.90 |
| 2000 + | PHP150.97 | PHP301.94 |
*price indicative
- RS Stock No.:
- 220-587
- Mfr. Part No.:
- NTMFS0D4N04XMT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 509A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DFN-5 | |
| Series | NTMFS | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 0.42mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.79V | |
| Maximum Power Dissipation Pd | 197W | |
| Typical Gate Charge Qg @ Vgs | 133nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.9mm | |
| Height | 1mm | |
| Length | 5mm | |
| Standards/Approvals | Pb-Free, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 509A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DFN-5 | ||
Series NTMFS | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 0.42mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.79V | ||
Maximum Power Dissipation Pd 197W | ||
Typical Gate Charge Qg @ Vgs 133nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 5.9mm | ||
Height 1mm | ||
Length 5mm | ||
Standards/Approvals Pb-Free, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The ON Semiconductor Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.
Halogen Free
RoHS Compliant
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