Nexperia PSM Type N-Channel MOSFET, 100 A, 30 V Enhancement, 5-Pin LFPAK PSMN3R0-30YLDX

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Subtotal (1 reel of 1500 units)*

PHP40,830.00

(exc. VAT)

PHP45,735.00

(inc. VAT)

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Units
Per Unit
Per Reel*
1500 +PHP27.22PHP40,830.00

*price indicative

RS Stock No.:
219-514
Mfr. Part No.:
PSMN3R0-30YLDX
Manufacturer:
Nexperia
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Brand

Nexperia

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

30V

Series

PSM

Package Type

LFPAK

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

91W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

21.9nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
PH
The Nexperia N-Channel MOSFET features NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Low parasitic inductance and resistance

High reliability clip bonded and solder die attach Power SO8 package

Qualified to 175 °C

Superfast switching with soft recovery

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