Nexperia PSM Type N-Channel MOSFET, 66 A, 30 V Enhancement, 5-Pin LFPAK PSMN6R1-30YLDX
- RS Stock No.:
- 219-439
- Mfr. Part No.:
- PSMN6R1-30YLDX
- Manufacturer:
- Nexperia
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Subtotal (1 tape of 1 unit)*
PHP31.42
(exc. VAT)
PHP35.19
(inc. VAT)
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- 497 unit(s) ready to ship from another location
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Tape(s) | Per Tape |
|---|---|
| 1 - 9 | PHP31.42 |
| 10 - 99 | PHP27.93 |
| 100 - 499 | PHP26.18 |
| 500 - 999 | PHP24.44 |
| 1000 + | PHP21.82 |
*price indicative
- RS Stock No.:
- 219-439
- Mfr. Part No.:
- PSMN6R1-30YLDX
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 66A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | PSM | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 8.35mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Maximum Power Dissipation Pd | 47W | |
| Typical Gate Charge Qg @ Vgs | 6.8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 66A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series PSM | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 8.35mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Maximum Power Dissipation Pd 47W | ||
Typical Gate Charge Qg @ Vgs 6.8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The Nexperia N-Channel MOSFET features NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package
Qualified to 175 °C
Superfast switching with soft recovery
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