Nexperia PSM Type N-Channel MOSFET, 120 A, 40 V Enhancement, 5-Pin LFPAK PSMN3R2-40YLDX

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Subtotal (1 tape of 1 unit)*

PHP51.35

(exc. VAT)

PHP57.51

(inc. VAT)

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1 - 9PHP51.35
10 - 99PHP45.94
100 - 499PHP42.34
500 - 999PHP39.64
1000 +PHP35.14

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Packaging Options:
RS Stock No.:
219-408
Mfr. Part No.:
PSMN3R2-40YLDX
Manufacturer:
Nexperia
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Brand

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

40V

Package Type

LFPAK

Series

PSM

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

3.3mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

10 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

115W

Typical Gate Charge Qg @ Vgs

26nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
PH
The Nexperia N-Channel MOSFET is utilizing Advanced TrenchMOS Super junction technology. The package is qualified to 175 °C. It is designed for high-performance power switching applications. Key applications include automation, robotics, DC-to-DC converters, brushless DC motor control, industrial load-switching, eFuse, and inrush management.

Low parasitic inductance and resistance

High reliability clip bonded and solder die attach Power SO8 package

Wave solder able

Superfast switching with soft recovery

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