Nexperia PSM Type N-Channel MOSFET, 120 A, 100 V Enhancement, 5-Pin LFPAK PSMN3R9-100YSFX

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Subtotal (1 tape of 1 unit)*

PHP151.86

(exc. VAT)

PHP170.08

(inc. VAT)

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1 - 9PHP151.86
10 - 99PHP137.02
100 - 499PHP125.68
500 - 999PHP116.95
1000 +PHP104.73

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Packaging Options:
RS Stock No.:
219-278
Mfr. Part No.:
PSMN3R9-100YSFX
Manufacturer:
Nexperia
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Brand

Nexperia

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

100V

Series

PSM

Package Type

LFPAK

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

4.3mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

120nC

Maximum Power Dissipation Pd

294W

Maximum Gate Source Voltage Vgs

10 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
PH
The Nexperia N-Channel MOSFET is qualified to 175°C. It is Ideal for both industrial and consumer applications. It is suitable for synchronous rectification in AC-DC and DC-DC converters, primary side switching in 48V DC-DC systems, BLDC motor control, USB-PD and mobile fast-charge adapters, as well as flyback and resonant topologies.

Strong avalanche energy rating

Avalanche rated and 100% tested

Ha free and RoHS compliant

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