Nexperia PSM Type N-Channel MOSFET, 231 A, 80 V Enhancement, 5-Pin LFPAK PSMN2R6-80YSFX

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Subtotal (1 tape of 1 unit)*

PHP177.17

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PHP198.43

(inc. VAT)

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1 - 9PHP177.17
10 - 99PHP159.72
100 - 499PHP146.62
500 - 999PHP136.15
1000 +PHP122.19

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Packaging Options:
RS Stock No.:
219-363
Mfr. Part No.:
PSMN2R6-80YSFX
Manufacturer:
Nexperia
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Brand

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

231A

Maximum Drain Source Voltage Vds

80V

Series

PSM

Package Type

LFPAK

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

2.4mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

10 V

Maximum Power Dissipation Pd

294W

Typical Gate Charge Qg @ Vgs

127nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

Ha-free and RoHS

Automotive Standard

No

COO (Country of Origin):
PH
The Nexperia N-Channel MOSFET is qualified to 175°C. It is Ideal for both industrial and consumer applications. It is suitable for synchronous rectification in AC-DC and DC-DC converters, primary side switching in 48V DC-DC systems, BLDC motor control, USB-PD and mobile fast-charge adapters, as well as flyback and resonant topologies.

Strong avalanche energy rating

Avalanche rated and 100% tested

Ha free and RoHS compliant

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