Nexperia PSM Type N-Channel MOSFET, 120 A, 100 V Enhancement, 4-Pin LFPAK PSMN3R7-100BSEJ

This image is representative of the product range

Bulk discount available

Subtotal (1 tape of 1 unit)*

PHP306.34

(exc. VAT)

PHP343.10

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from July 06, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Tape(s)
Per Tape
1 - 9PHP306.34
10 - 99PHP275.79
100 +PHP253.97

*price indicative

Packaging Options:
RS Stock No.:
219-348
Mfr. Part No.:
PSMN3R7-100BSEJ
Manufacturer:
Nexperia
Find similar products by selecting one or more attributes.
Select all

Brand

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

100V

Series

PSM

Package Type

LFPAK

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

3.95mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

176nC

Maximum Power Dissipation Pd

405W

Minimum Operating Temperature

25°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
PH
The Nexperia N-Channel MOSFET features very low RDS(on) and enhanced safe operating area performance. It is optimized for hot-swap controllers, capable of withstanding high inrush currents and minimizing I²R losses for improved efficiency. Applications include hot-swap, load switching, soft start, and e-fuse.

SOA for superior linear mode operation

LFPAK88 package for applications that demand the highest performance

Related links