Nexperia PSM Type N-Channel MOSFET, 120 A, 100 V Enhancement, 4-Pin LFPAK PSMN4R8-100BSEJ

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal 10 units (supplied on a continuous strip)*

PHP1,664.50

(exc. VAT)

PHP1,864.20

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 733 unit(s) shipping from December 29, 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
10 - 99PHP166.45
100 +PHP153.93

*price indicative

Packaging Options:
RS Stock No.:
219-429P
Mfr. Part No.:
PSMN4R8-100BSEJ
Manufacturer:
Nexperia
Find similar products by selecting one or more attributes.
Select all

Brand

Nexperia

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

100V

Package Type

LFPAK

Series

PSM

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

4.8mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

25°C

Maximum Gate Source Voltage Vgs

10 V

Maximum Power Dissipation Pd

405W

Typical Gate Charge Qg @ Vgs

278nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
PH
The Nexperia N-Channel MOSFET features very low RDS(on) and enhanced safe operating area performance. It is optimized for hot-swap controllers, capable of withstanding high inrush currents and minimizing I²R losses for improved efficiency. Applications include hot-swap, load switching, soft start, and e-fuse.

SOA for superior linear mode operation

LFPAK88 package for applications that demand the highest performance

Related links