IXYS HiperFET, Polar N-Channel MOSFET, 115 A, 300 V Enhancement, 4-Pin SOT-227 IXFN140N30P

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Subtotal (1 unit)*

PHP2,590.81

(exc. VAT)

PHP2,901.71

(inc. VAT)

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Units
Per Unit
1 - 9PHP2,590.81
10 - 49PHP2,587.78
50 - 99PHP2,159.03
100 - 249PHP2,156.70
250 +PHP2,027.11

*price indicative

Packaging Options:
RS Stock No.:
193-739
Distrelec Article No.:
302-53-363
Mfr. Part No.:
IXFN140N30P
Manufacturer:
IXYS
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Brand

IXYS

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

115A

Maximum Drain Source Voltage Vds

300V

Package Type

SOT-227

Series

HiperFET, Polar

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

700W

Typical Gate Charge Qg @ Vgs

185nC

Maximum Gate Source Voltage Vgs

-20V, +20V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Width

25.07mm

Standards/Approvals

No

Length

38.2mm

Height

9.6mm

Automotive Standard

No

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