IXYS HiperFET, Polar Type N-Channel MOSFET, 115 A, 200 V Enhancement, 4-Pin SOT-227 IXFN140N20P
- RS Stock No.:
- 193-616
- Distrelec Article No.:
- 302-53-362
- Mfr. Part No.:
- IXFN140N20P
- Manufacturer:
- IXYS
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
PHP1,518.14
(exc. VAT)
PHP1,700.32
(inc. VAT)
Add 2 units to get free delivery
Temporarily out of stock
- Shipping from September 14, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 1 - 4 | PHP1,518.14 |
| 5 + | PHP1,472.58 |
*price indicative
- RS Stock No.:
- 193-616
- Distrelec Article No.:
- 302-53-362
- Mfr. Part No.:
- IXFN140N20P
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 115A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | HiperFET, Polar | |
| Package Type | SOT-227 | |
| Mount Type | Panel | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 240nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 680W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 38.23mm | |
| Standards/Approvals | No | |
| Height | 9.6mm | |
| Width | 25.42 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 115A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series HiperFET, Polar | ||
Package Type SOT-227 | ||
Mount Type Panel | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 240nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 680W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 38.23mm | ||
Standards/Approvals No | ||
Height 9.6mm | ||
Width 25.42 mm | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS Type N-Channel MOSFET 200 V Enhancement, 4-Pin SOT-227
- IXYS Type N-Channel MOSFET 300 V Enhancement, 4-Pin SOT-227
- IXYS Type N-Channel MOSFET 300 V Enhancement, 4-Pin SOT-227 IXFN140N30P
- IXYS Type N-Channel MOSFET 1 kV Enhancement, 4-Pin SOT-227
- IXYS Type N-Channel MOSFET 500 V Enhancement, 4-Pin SOT-227
- IXYS Type N-Channel MOSFET 600 V Enhancement, 4-Pin SOT-227
- IXYS Type N-Channel MOSFET 500 V Enhancement, 4-Pin SOT-227
- IXYS Type N-Channel MOSFET 600 V Enhancement, 4-Pin SOT-227