onsemi, Single N-Channel JFET-Channel JFET, 30 V 1.2 → 3 mA, 3-Pin SOT-883
- RS Stock No.:
- 867-3287P
- Mfr. Part No.:
- TF412ST5G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal 100 units (supplied on a continuous strip)*
PHP1,432.90
(exc. VAT)
PHP1,604.80
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per Unit |
|---|---|
| 100 - 200 | PHP14.329 |
| 250 - 450 | PHP14.30 |
| 500 - 950 | PHP12.758 |
| 1000 + | PHP12.645 |
*price indicative
- RS Stock No.:
- 867-3287P
- Mfr. Part No.:
- TF412ST5G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Sub Type | JFET | |
| Channel Type | N | |
| Product Type | JFET | |
| Maximum Drain Source Voltage Vds | 30V | |
| Configuration | Single | |
| Mount Type | Surface | |
| Package Type | SOT-883 | |
| Maximum Power Dissipation Pd | 100mW | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Drain Source Current Ids | 1.2 → 3 mA | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 410μm | |
| Length | 1.08mm | |
| Width | 680μm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Sub Type JFET | ||
Channel Type N | ||
Product Type JFET | ||
Maximum Drain Source Voltage Vds 30V | ||
Configuration Single | ||
Mount Type Surface | ||
Package Type SOT-883 | ||
Maximum Power Dissipation Pd 100mW | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Drain Source Current Ids 1.2 → 3 mA | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 410μm | ||
Length 1.08mm | ||
Width 680μm | ||
Automotive Standard No | ||
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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