onsemi, Single Type P-Channel JFET-Channel JFET, 15 V -2 to -15 mA, 3-Pin SOT-23
- RS Stock No.:
- 806-4318P
- Mfr. Part No.:
- MMBFJ270
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
PHP1,592.30
(exc. VAT)
PHP1,783.40
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 350 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 100 - 200 | PHP15.923 |
| 250 - 450 | PHP15.915 |
| 500 - 950 | PHP13.746 |
| 1000 + | PHP12.811 |
*price indicative
- RS Stock No.:
- 806-4318P
- Mfr. Part No.:
- MMBFJ270
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P | |
| Sub Type | JFET | |
| Product Type | JFET | |
| Maximum Drain Source Voltage Vds | 15V | |
| Configuration | Single | |
| Mount Type | Surface | |
| Package Type | SOT-23 | |
| Minimum Operating Temperature | -55°C | |
| Pin Count | 3 | |
| Drain Source Current Ids | -2 to -15 mA | |
| Maximum Power Dissipation Pd | 225mW | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 2.9mm | |
| Height | 1.04mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P | ||
Sub Type JFET | ||
Product Type JFET | ||
Maximum Drain Source Voltage Vds 15V | ||
Configuration Single | ||
Mount Type Surface | ||
Package Type SOT-23 | ||
Minimum Operating Temperature -55°C | ||
Pin Count 3 | ||
Drain Source Current Ids -2 to -15 mA | ||
Maximum Power Dissipation Pd 225mW | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 2.9mm | ||
Height 1.04mm | ||
Automotive Standard No | ||
P-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.