onsemi MMBF5103, Single Type N-Channel Switch-N-Channel JFET, 20 V 10 to 40 mA, 3-Pin SOT-23
- RS Stock No.:
- 806-4282
- Mfr. Part No.:
- MMBF5103
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 50 units)*
PHP644.60
(exc. VAT)
PHP721.95
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per Unit | Per Pack* |
|---|---|---|
| 50 - 50 | PHP12.892 | PHP644.60 |
| 100 - 200 | PHP12.505 | PHP625.25 |
| 250 - 450 | PHP12.13 | PHP606.50 |
| 500 - 950 | PHP11.766 | PHP588.30 |
| 1000 + | PHP11.413 | PHP570.65 |
*price indicative
- RS Stock No.:
- 806-4282
- Mfr. Part No.:
- MMBF5103
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | JFET | |
| Sub Type | Switch-N-Channel | |
| Maximum Drain Source Voltage Vds | 20V | |
| Configuration | Single | |
| Mount Type | Surface | |
| Package Type | SOT-23 | |
| Minimum Operating Temperature | -55°C | |
| Pin Count | 3 | |
| Maximum Power Dissipation Pd | 350mW | |
| Drain Source Current Ids | 10 to 40 mA | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.04mm | |
| Length | 2.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type JFET | ||
Sub Type Switch-N-Channel | ||
Maximum Drain Source Voltage Vds 20V | ||
Configuration Single | ||
Mount Type Surface | ||
Package Type SOT-23 | ||
Minimum Operating Temperature -55°C | ||
Pin Count 3 | ||
Maximum Power Dissipation Pd 350mW | ||
Drain Source Current Ids 10 to 40 mA | ||
Maximum Operating Temperature 150°C | ||
Height 1.04mm | ||
Length 2.9mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.